High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator
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High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence | Semantic Scholar
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Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy: Journal of Applied Physics: Vol 100, No 1
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PPT - Improvement of Characteristic Temperature for AlGaInP Laser Diodes PowerPoint Presentation - ID:3337083
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